Samsung boosts 1Tb V-NAND bit density by 50 percent
Samsung boosts 1Tb V-NAND bit density by 50 percent
www.eenewseurope.com Samsung boosts 1Tb V-NAND bit density by 50 percent
Groundbreaking double-stack V-NAND cell structure maximizes fabrication productivity through advanced ‘channel hole etching’ technology. %
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